Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy

著录项

• 来源
  《中国科学:物理学 力学 天文学（英文版）》 |2013年第11期|2059-2064|共6页
• 作者

  FANG HeNan; ZHANG Rong; LIU Bin; LI YeCao; FU DeYi; LI Yi; XIE ZiLi;

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• 作者单位

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

  Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronics Science and Engineering Nanjing National Laboratory of Microstructure Nanjing University Nanjing 210093 China;

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• 收录信息 北京大学中文核心期刊目录(北大核心);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词