首页> 中文期刊> 《中国科学:物理学 力学 天文学(英文版) 》 >The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

         

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    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

    State Key Laboratory of ASIC and System School ofMicroelectronics Fudan University Shanghai 200433 China;

    School ofElectronical & Mechanical Engineering Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School ofMicroelectronics Xidian University Xi'an 710071 China;

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