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A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process

     

著录项

  • 来源
    《中国科学》|2017年第8期|P.248-250|共3页
  • 作者单位

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

    [1]College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China;

  • 原文格式 PDF
  • 正文语种 CHI
  • 中图分类 光纤通信;
  • 关键词

    CMOS工艺 低功率 VCO LC 波段 高Q 纳米 技术;

  • 入库时间 2023-07-24 18:24:15

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