Hazy Backside Gettering with a-Si: H Film

摘要

Hazy backside gettering of boron-doped 111 siljcon wafer with a-Si: H film deposited by rf glowdischarge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech-lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy-len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances thegettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reducesthe processing contamination.