The diamond films were deposited on a Si substrate with chemical vapor deposition MCVD using methanehydrogen gas.Raman active phonon and sp~2/sp~3 ratio in diamond/Si（100）films were investigated by Raman spectra in the difference scattering configurations.Furthermore,the Raman scattering spectrum of diamond/Si（100）hetero-junction was measured with different thickness to investigate the spin dynamics of nitrogen vacancy spins.The Fluorescence scanning microscopy indicated that nitrogen vacancy center electron spin was coupled to the host nitrogen nuclear spin by the electron spin resonance.The strong peak of 1332 cm-1displayed the F2gsymmetry of diamond,while the broad E2gmode peak of 1550 cm-1was a broad band G mode,and 1150 cm-1peak corresponded to the nano-diamond and disordered graphitic carbon form with disordered SP~2 hybridization.The Raman spectra of the diamond films were observed as a function of the residual stress,crystal size and their orientation.The peaks of 1132 cm-1and 1480 cm-1were associated with hydrogen bonding.The transport of diamond exhibited sp~3 spin related effect.The diamond/Si（100）PDOS is the results of spin-related couple of sp~3,p and d orbital hybridization.The spin dynamics was achieved by the orbital competition,strong crystal field and charge order.
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