Reducing Zn diffusion in single axial junction In P nanowire solar cells for improved performance

摘要

In this work axial n-i-p junction In P nanowires were grown by selective-area metal organic vapor phase epitaxy（SA-MOVPE） technique with the growth sequence starting from n-segment. The optical properties and carrier lifetimes of the n-, i-and p-type segments were studied and compared using time-resolved photoluminescence（PL） and cathodoluminescence（CL） measurements. We demonstrate for the first time that CL is capable of resolving the electrical profile of the nanowires, namely the varied lengths of the n-, i-and p-segments, providing a simple and effective approach for nanowire growth calibration and optimization. The CL result was further confirmed by electron beam induced current（EBIC） and photocurrent mapping measurements performed from the fabricated single nanowire solar cell devices. It is revealed that despite a non-optimized device structure（very long n-region and short i-region）, the n-i-p nanowire solar cells show improved power conversion efficiency（PCE） than the previously reported p-i-n（growth starts with p-segment） single nanowire solar cells due to reduced p-type dopant（Zn） diffusion during the growth of n-i-p solar cell structure.