首页> 中文期刊> 《等离子体科学和技术:英文版》 >Study on DNA Damage Induced by Neon Beam Irradiation in Saccharomyces Cerevisiae

Study on DNA Damage Induced by Neon Beam Irradiation in Saccharomyces Cerevisiae

             

摘要

Yeast strain Saccharomyces cerevisiae was irradiated with different doses of85 MeV/u ^(20)Ne^(10+) to investigate DNA damage induced by heavy ion beam in eukaryotic microorganism.The survival rate,DNA double strand breaks (DSBs) and DNA polymorphic weretested after irradiation.The results showed that there were substantial differences in DNA betweenthe control and irradiated samples.At the dose of 40 Gy,the yeast cell survival rate approached50%,DNA double-strand breaks were barely detectable,and significant DNA polymorphism wasobserved.The alcohol dehydrogenase Ⅱ gene was amplified and sequenced.It was observed thatbase changes in the mutant were mainly transversions of T→G and T→C.It can be concludedthat heavy ion beam irradiation can lead to change in single gene and may be an effective way toinduce mutation.

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