机译:60 MHz / 2 MHz双频放电的C2F6 / O2 / Ar等离子体化学性质及其对SiCOH低k膜刻蚀的影响%60MHz / 2 MHz双频放电的C2F6 / O2 / Ar等离子体化学性质及其对SiCOH低k膜的蚀刻
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University, Suzhou 215006, China;
等离子体化学; 放电特性; 蚀刻; 薄膜; 双频率; 功率LED; 等离子体环境; 碳自由基;