Study on electronic blocking layer of 403 nm Ga N-based vertical cavity surface emitting lasers

摘要

In order to obtain good optical characteristics in the Ga N-based vertical-cavity surface-emitting laser(VCSEL), different kinds of Al Ga N electron blocking layers(EBL) were introduced. These were inserted coherently near the active region to limit electron leakage into the p-doped side. The research was conducted by photonic integrated circuit simulator in three-dimensional(PICS3D). The simulated results reveal that an EBL can improve the optical characteristics of a VCSEL effectively. All the advantages are due to a reduction in the electron leakage in the quantum wells. While the voltage of the five-layer EBLs LD is lower than the voltage of the seven-layer EBLs LD, the output power of the two is approximately the same, so the five-layer EBLs is the best choice for comprehensive structure analysis as the epitaxial structure can be grown more easily on it.