铜导体CFETR氦冷固态包层及屏蔽中子学设计与分析

摘要

According to the design requirement of copper conductor CFETR, the neutronics design and analysis of its helium cooled solid blanket (HCSB) and shielding are conducted. The design of HCSB based on casing pipes is proposed.Neutronics design and analysis show that Tritium Breeding Ratio(TBR)of HCSB with casing pipes reaches 1.25, and meets the tritium self-efficiency requirement, and radiation induced conductivity (RIC) and radiation induced electrical degradation (RIED) effect on insulation of toroidal field coil will not be remarkable in reactor life time.%根据铜导体CFETR设计要求,对铜导体CFETR固态包层和屏蔽进行了中子学设计与分析,提出了套管结构的氦冷固态包层设计方案.包层设计和屏蔽分析结果表明,基于套管的氦冷固态包层的氚增殖比(TBR)达到了1.25, 满足铜导体CFTER氚自持设计要求;环向场线圈绝缘层在堆寿期内不会出现显著的辐射感应电导率(RIC)与辐射引起的电气性能退化(RIED)效应.