首页> 中文期刊> 《纳米技术与精密工程》 >Active-Thermal-Tunable Terahertz Absorber with Temperature-Sensitive Material Thin Film

Active-Thermal-Tunable Terahertz Absorber with Temperature-Sensitive Material Thin Film

         

摘要

It is shown that active-tunable terahertz absorbers can be realized in a sandwich-structured system comprising an ultrathin dielectric film (polyimide) on a temperature-sensitive substrate (InSb) with a metal film on the back by utilizing the intrinsic carrier density (N) variation in InSb.When increasing the temperature from 250 to 320 K,N in InSb varied from ~5.50×1015 to ~2.98×1016cm-3.Fixing the thickness of dielectric film with the value of 1.37 μm,the absorption peak shifted from 1.41 to 3.29 THz while keeping absorption higher than 99%.This active tunability can respond to even a slight temperature perturbation,and shows polarization insensitivity as well as high tolerance of incidence-angle (absorption peak can still exceed 90% even the incidence angle reaches 60°).Besides,the refractive index of polyimide (PI) has thermal stability at the terahertz range and the merit of good workability.These characteristics guarantee the stability of active-tunable performance.The peculiarities and innovations of this proposal promise a wide range of high efficiency terahertz devices,such as thermal sensors,spatial light modulators (SLMs) and so on.

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  • 来源
    《纳米技术与精密工程》 |2018年第2期|123-128|共6页
  • 作者单位

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China;

    Hebei University of Engineering, Handan 056038, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and Key Laboratory of Opto-Electronics Information and Technology(Ministry of Education), Tianjin University, Tianjin 300072, China;

    School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, USA;

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