The influence of H_(2)O and O_(2) on the optoelectronic properties of inverted quantum-dot light-emitting diodes

摘要

The influence of H_(2)O and O_(2) on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H_(2)O from ambience, ZnMgO exhibits a high conductivity, whereas the resultant QLEDs show a low efficiency. The efficiency of QLEDs can be enhanced by annealing ZnMgO in H_(2)O-free glovebox;however, the uniformity and the current of the devices are degraded due to the presence of O_(2), which adsorbs on the surface of ZnMgO and captures the free electrons of ZnMgO. By exposing the devices with ultraviolet (UV) irradiation, the adsorbed O_(2) can be released, consequently leading to the increase of driving current. Our work discloses the influence of the annealing ambience on the conductivity of ZnMgO, and reveals the interaction of H_(2)O/O_(2) and UV with the ZnMgO and its effect on the performance of the resultant inverted QLEDs, which could help the community to better understand the mechanisms of ZnMgO-based QLEDs.