High-mobility patternable MoS_(2) percolating nanofilms

摘要

Fabrication of large-area and uniform semiconducting thin films of two-dimensional(2D)materials is paramount for the full exploitation of their atomic thicknesses and smooth surfaces in integrated circuits.In addition to elaborate vapor-based synthesis techniques for the wafer-scale growth of 2D films,solution-based approaches for high-quality thin films from the liquid dispersions of 2D flakes,despite underdeveloped,are alternative cost-effective tactics.Here,we present layer-by-layer(LbL)assembly as an effective approach to obtaining scalable semiconducting films of molybdenum disulfide(MoS_(2))for field-effect transistors(FETs).LbL assembly is achieved by coordinating electrochemically exfoliated MoS_(2) with cationic poly(diallyldimethylammonium chloride)(PDDA)through electrostatic interactions.The PDDA/MoS_(2) percolating nanofilms show controlled and self-limited growth on a variety of substrates,and are easily patterned through lift-off processes.Ion gel gated FETs are fabricated on these MoS_(2) nanofilms,and they show mobilities of 9.8 cm^(2)·V^(−1)·s^(−1),on/off ratios of 2.1×10^(5) with operating voltages less than 2 V.The annealing temperature in the fabrication process can be as low as 200°C,thereby permitting the fabrication of flexible FETs on polyethylene terephthalate substrates.The LbL assembly technique holds great promise for the large-scale fabrication of flexible electronics based on solution-processed 2D semiconductors.