Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

著录项

• 来源
  《纳米研究（英文版）》 |2021年第1期|232-238|共7页
• 作者

  Chaoqi Dai; Peiqin Chen; Shaocheng Qi; Yongbin Hu; Zhitang Song; Mingzhi Dai;

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• 作者单位

  College of Materials Science and Engineering Kunming University of Science and Technology Kunming 650093 China;

  Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;

  Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;

  Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;

  Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  Shanghai Microsystem and Information Technology Institute Chinese Academy of Sciences Shanghai 200433 China;

  Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;

  Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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