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Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides

         

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  • 来源
    《纳米研究(英文版) 》 |2020年第12期|3439-3444|共6页
  • 作者单位

    SZU-NUS Collaborative Innovation Center for Optoelectronic Science&Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117551 Singapore;

    Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117551 Singapore;

    Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117551 Singapore;

    Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;

    SZU-NUS Collaborative Innovation Center for Optoelectronic Science&Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Optoelectronic Engineering Shenzhen University Shenzhen 518060 China;

    Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117551 Singapore;

    Centre for Advanced 2D Materials National University of Singapore Block S14 6 Science Drive 2 Singapore 117546 Singapore;

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