MoS2 dual-gate transistors with electrostatically doped contacts

著录项

• 来源
  《纳米研究（英文版）》 |2019年第10期|2515-2519|共5页
• 作者

  Fuyou Liao; Yufeng Xie; Lin Chen; Hao Zhu; Qingqing Sun; Peng Zhou; Xiangwei Jiang; Jing Wan; Wenzhong Bao; David Wei Zhang; Yaocheng Sheng; Zhongxun Guo; Hongwei Tang; Yin Wang; Lingyi Zong; Xinyu Chen; Antoine Riaud; Jiahe Zhu;

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• 作者单位

  State Key Laboratory of ASIC and System School of Microelearonics Fudan University Shanghai 200433 China;

  Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai 200433 China;

  School of Electronic Science and Engineering Nanjing University Nanjing 210093 China;

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• 正文语种 eng
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• 入库时间 2022-08-19 04:38:41