首页> 中文期刊> 《纳米研究:英文版》 >Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide

Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide

         

摘要

Chemical vapor deposition (CVD) is the most efficient method to grow large-area two dimensional (2D) transition metal dichiacogenides (TMDCs) in high quality.Monolayer molybdenum disulfide (MoS2) and seed-assistant are the mostly selected 2D TMDC and growth strategy for such CVD processes,respectively.Though the advantages of seed catalysts in facilitating the nucleation,achieving higher yield and better repeatability,as well as their effects on the morphologies of as-grown MoS2 have been studied,the influence of seeding promoters on both optical and electrical properties of as-grown monolayer MoS2 is not known comprehensively,which is indeed critical for understanding fundamental physics and developing practical application of such emerging 2D semiconductors.In this report,we systematically investigated the effect of different seeding promoters on the properties of CVD-grown monolayer MoS2.It is found that different seed molecules lead to different impacts on the optical and electrical properties of as-grown monolayer MoS2.Among three different seed catalysts (perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS),copper phthalocyanine (CuPc),and crystal violet (CV)),PTAS performs better in obtaining large area monolayer MoS2 with good optical quality and high electrical mobility than the other two.Our work gives a guide for modifying the properties of as-grown monolayer MoS2 and other 2D transition metal dichalcogenides in seeding promoters-assisted synthesis process.

著录项

  • 来源
    《纳米研究:英文版》 |2019年第4期|P.823-827|共5页
  • 作者单位

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [2]State Key Laboratory of Functional Material for Informatics;

    Shanghai Institute (rf Microsystem and Information Technology;

    Chinese Academy of Sciences;

    Changning Road 865;

    Shanghai 200050;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [2]State Key Laboratory of Functional Material for Informatics;

    Shanghai Institute (rf Microsystem and Information Technology;

    Chinese Academy of Sciences;

    Changning Road 865;

    Shanghai 200050;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

    [1]State Key Laboratory of ASIC and System;

    School of Information Science and Technology;

    Fudan University;

    Shanghai 200433;

    China;

  • 原文格式 PDF
  • 正文语种 CHI
  • 中图分类 物理学;
  • 关键词

    transition metal dichalcogenides; monolayer M0S2; seeding promoters; chemical vapor deposition; optical and electrical properties;

    机译:过渡金属二卤化物;单层M0S2;促进剂;化学气相沉积;光电性能;
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