[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[2]State Key Laboratory of Functional Material for Informatics;
Shanghai Institute (rf Microsystem and Information Technology;
Chinese Academy of Sciences;
Changning Road 865;
Shanghai 200050;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[2]State Key Laboratory of Functional Material for Informatics;
Shanghai Institute (rf Microsystem and Information Technology;
Chinese Academy of Sciences;
Changning Road 865;
Shanghai 200050;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
[1]State Key Laboratory of ASIC and System;
School of Information Science and Technology;
Fudan University;
Shanghai 200433;
China;
transition metal dichalcogenides; monolayer M0S2; seeding promoters; chemical vapor deposition; optical and electrical properties;