首页> 中文期刊> 《纳米研究(英文版) 》 >Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions

Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions

         

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  • 来源
    《纳米研究(英文版) 》 |2016年第2期|507-516|共10页
  • 作者单位

    State Key Laboratory of Superlattices and Microstructures,Institute of semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China;

    State Key Laboratory of Superlattices and Microstructures,Institute of semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China;

    Physics and Electronic Engineering College,Henan Normal University,Xinxiang 453007,China;

    State Key Laboratory of Superlattices and Microstructures,Institute of semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China;

    School for Engineering of Matter,Transport and Energy,Arizona State University,Tempe,Arizona 85287,USA;

    Physics and Electronic Engineering College,Henan Normal University,Xinxiang 453007,China;

    State Key Laboratory of Superlattices and Microstructures,Institute of semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,China;

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