首页> 中文期刊> 《纳米研究(英文版)》 >Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip

Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip

         

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  • 来源
    《纳米研究(英文版)》 |2016年第2期|530-536|共7页
  • 作者单位

    Department of Applied Physics,Graduate School of Engineering,Osaka University,2-1 Yamada-oka,Suita,Osaka 565-0871,Japan;

    Department of Applied Physics,Graduate School of Engineering,Osaka University,2-1 Yamada-oka,Suita,Osaka 565-0871,Japan;

    Department of Applied Physics,Graduate School of Engineering,Osaka University,2-1 Yamada-oka,Suita,Osaka 565-0871,Japan;

    Department of Applied Physics,Graduate School of Engineering,Osaka University,2-1 Yamada-oka,Suita,Osaka 565-0871,Japan;

    Department of Applied Physics,Graduate School of Engineering,Osaka University,2-1 Yamada-oka,Suita,Osaka 565-0871,Japan;

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  • 正文语种 eng
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