首页> 中文期刊> 《纳米研究(英文版) 》 >Gallium bismuth halide GaBi-X2 (X =I, Br, Cl) monolayers with distorted hexagonal framework: Novel room-temperature quantum spin Hall insulators

Gallium bismuth halide GaBi-X2 (X =I, Br, Cl) monolayers with distorted hexagonal framework: Novel room-temperature quantum spin Hall insulators

         

摘要

Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect.Among these,group Ⅲ-Ⅴ monolayers and their halides,which have a chair structure (regular hexagonal framework),have been widely studied.Using first-principles calculations,we formulate a new structure model for the functionalized group Ⅲ-Ⅴ monolayers,which consist of rectangular GaBi-X2 (X =I,Br,Cl) monolayers with a distorted hexagonal framework (DHF).These structures have a far lower energy than the GaBi-X2 monolayers with a chair structure.Remarkably,the DHF GaBi-X2 monolayers are all QSH insulators,which exhibit sizeable nontrivial band gaps ranging from 0.17 to 0.39 eV.The band gaps can be widely tuned by applying different spin-orbit coupling strengths,resulting in a distorted Dirac cone.

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  • 来源
    《纳米研究(英文版) 》 |2017年第6期|2168-2180|共13页
  • 作者单位

    Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

    Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

    International Center for Quantum Materials, Peking University, Beijing 100871, China;

    School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;

    School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;

    Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

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