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Interface engineering of high efficiency perovskite solar cells based on ZnO nanorods using atomic layer deposition

         

摘要

Despite the considerably improved efficiency of inorganic-organic metal hybrid perovskite solar cells (PSCs),electron transport is still a challenging issue.In this paper,we report the use of ZnO nanorods prepared by hydrothermal selfassembly as the electron transport layer in perovskite solar cells.The efficiency of the perovskite solar cells is significantly enhanced by passivating the interfacial defects via atomic layer deposition of A12O3 monolayers on the ZnO nanorods.By employing the A12O3 monolayers,the average power conversion efficiency of methylammonium lead iodide PSCs was increased from 10.33% to 15.06%,and the highest efficiency obtained was 16.08%.We suggest that the passivation of defects using the atomic layer deposition of monolayers might provide a new pathway for the improvement of all types of PSCs..

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  • 来源
    《纳米研究(英文版)》 |2017年第3期|1092-1103|共12页
  • 作者单位

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Department of Electrical & Computer Engineering and Center for Nanoscale Science & Engineering, University of Kentucky, Lexington,Kentucky 40506, USA;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Department of Electrical & Computer Engineering and Center for Nanoscale Science & Engineering, University of Kentucky, Lexington,Kentucky 40506, USA;

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