High-performance sub-10-nm monolayer black phosphorene tunneling transistors

摘要

Moore's law is approaching its physical limit. Tunneling field-effect transistors (TFETs) based on two-dimensional (2D) materials provide a possible scheme to extend Moore's law down to the sub-10-nm region owing to the electrostatic integrity and absence of dangling bonds in 2D materials. We report an ab initio quantum transport study on the device performance of monolayer (ML) black phosphorene (BP) TFETs in the sub-10-nm scale (6-10 nm). Under the optimal schemes, the ML BP TFETs show excellent device performance along the armchair transport direction. The on-state current, delay time, and power dissipation of the optimal sub-10-nm ML BP TFETs significantly surpass the latest International Technology Roadmap for Semiconductors (ITRS) requirements for high-performance devices. The subthreshold swings are 56-100 mV/dec, which are much lower than those of their Schottky barrier and metal oxide semiconductor field-effect transistor counterparts.