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Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

         

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  • 来源
    《纳米研究:英文版》 |2017年第1期|P.157-171|共15页
  • 作者单位

    [1]Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

    [2]School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245, USA;

    [3]State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, Bei)ing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China;

    [4]Broadcom Ltd., 2901 Via Fortuna #400, Austin, TX, 78746, USA;

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