We present a study of the fabrication of monolayer MoS2 on n-Si（111） substrates by modified thermal evaporation deposition and the optoelectrical properties of the resulting film. The as-grown MoS2 ultrathin film is about 10 nm thick, or about a few atomic layers of MoS2. The film has a large optical absorption range of 300-700 nm and strong luminescence emission at 682 nm. The optical absorption range covered almost the entire ultraviolet to visible light range, which is very useful for making high-efficiency solar cells. Moreover, the MoS2/Si heterojunction exhibited good rectification characteristics and excellent photovoltaic effects. The power conversion efficiency of the heterojunction device is about 1.79% under white light illumination of 10 m W/cm2. The results show that the monolayer MoS2 film will find many applications in high-efficiency optoelectronic devices.
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