New Chemical Bonds Formation in N-doped Diamond Induced by High Energy Heavv Ion Irradiations

摘要

In the present work, "low energy ion implantation+swift heavy ion irradiation" technique was used for studying new chemical bonds formation in N-doped diamond samples under high-energy heavy ion irradiations. The N-dopants were from 100 keV N-ion implantations at room temperature (RT) to doses 5×l017。