首页> 中文期刊> 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 >RBS Analysis of N-profile in N-doped Diamond after High Energy Heavy Ion Irradiations

RBS Analysis of N-profile in N-doped Diamond after High Energy Heavy Ion Irradiations

         

摘要

We have proposed a novel technique, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. Recently, we used this technique to synthesize carbon-nitrides such as a and β-C3N4. As we know, the ratio of nitrogen (N-) to carbon (C-) atoms is one of the key parameters for synthesizing the phase a or β-C3N4. The ideal ratio of N- to C-atoms, N/C, is 4/3. However, this value could not be easily achieved on account of the solubility, diffusion and release of the nitrogen atoms

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