FTIR Study of C-doped SiO2 Films Irradiated by 4.57 MeV／u Pb Ions

摘要

The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×1017C/cm2 to 8.6×1017C/cm2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×1011Pb/cm2 to 3.8×1012Pb/cm2.Some parameters were given in Table 1(TRIM 96 calculation)。