Enhanced Defect Accumulation and Erosion in GaN Bombarded with Low-energy Highly Charged Heavy Ions

摘要

Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the applications.