首页> 中文期刊> 《材料导报》 >空间太阳电池玻璃盖板表面超薄ITO防静电层的设计及制备工艺

空间太阳电池玻璃盖板表面超薄ITO防静电层的设计及制备工艺

         

摘要

ITO/MgF2 composite film has good surface conductivity and high transmittance,which can be applied to the antistatic & anti-reflection composite layer of space solar cell's glass cover.This work mainly focused on the outerlayer (i.e.ultra-thin ITO film) of the ITO/MgF2 composite film.We conducted a simulation upon the effect of ITO film's thickness on the composite film's optical properties via TFCalc software,premised on which an MgF2 thin film and an ITO thin film were sequentially deposited on a glass substrate by electron beam evaporation.The influences of processing parameters (deposition rate,deposition temperature and working pressure) and thickness of ITO thin film on the optical,electrical properties and microstructure of ITO/MgF2 composite thin film were studied.By applying 0.05 nm/s deposition rate,400 ℃ deposition temperature,2.3 × 10 2 Pa working pressure and 10 nm ITO thickness,we obtained a substantial continuity and a satisfactory sheet resistance (1.94 kΩ/□) of the ITO layer with which the ITO/MgF2 composite film's average transmittance in the visible range (400-800 nm) reached 89.00%.%ITO/MgF2复合薄膜既具有较好的表面导电性能又具有较高的透过率,可应用于空间太阳电池玻璃盖板表面.文章主要对ITO/MgF2复合薄膜中表层的超薄ITO薄膜进行了研究.利用TFCalc软件模拟了ITO薄膜厚度对ITO/MgF2复合薄膜光学性能的影响,根据模拟结果采用电子束蒸发法在衬底上依次沉积MgF2薄膜和氧化铟锡(ITO)薄膜,研究了ITO薄膜工艺参数(沉积速率、沉积温度和工作气压)和ITO薄膜厚度对ITO/MgF2复合薄膜光电性能及微观结构的影响.当ITO薄膜沉积速率为0.05 nm/s、沉积温度为400℃、工作气压为2.3×10-2 Pa、厚度为10 nm时,表层ITO薄膜基本连续,其方块电阻(1.94 kQ/□)已符合设计需求,ITO/MgF2复合薄膜在可见光区间(400~800nm)的平均透过率达到89.00%.

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