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Broadband THz absorption spectrometer based on excitonic nonlinear optical effects

机译:基于激子非线性光学效应的宽带太赫兹吸收光谱仪

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摘要

A broadly tunable THz source is realized via difference frequency generation,in which an enhancement to X(3) that is obtained via resonant excitation of Ⅲ-Ⅴ semiconductor quantum well excitons is utilized.The symmetry of the quantum wells (QWs) is broken by utilizing the built-in electric-field across a p-i-n junction to produce effective X(2)processes,which are derived from the high X(3).This X(2) media exhibits an onset of nonlinear processes at ~4Wcm 2,thereby enabling area (and,hence,power) scaling of the THz emitter.Phase matching is realized laterally through normal incidence excitation.Using two collimated 130 mW continuous wave (CW) semiconductor lasers with ~1-mm beam diameters,we realize monochromatic THz emission that is tunable from 0.75 to 3 THz and demonstrate the possibility that this may span 0.2-6 THz with linewidths of ~20 GHz and efficiencies of ~1 × 10-5,thereby realizing ~800 nW of THz power.Then,transmission spectroscopy of atmospheric features is demonstrated,thereby opening the way for compact,low-cost,swept-wavelength THz spectroscopy.
机译:通过产生差频来实现可调谐的太赫兹源,其中利用了通过Ⅲ-Ⅴ族半导体量子阱激子的共振激发获得的X(3)的增强。量子阱的对称性被破坏了。利用穿过引脚结的内置电场产生有效的X(2)过程,该过程从高X(3)派生。这种X(2)介质在〜4Wcm 2处出现非线性过程,因此通过垂直入射激发横向实现相位匹配。使用两束准直的130 mW连续光束(CW)半导体激光器,光束直径约为1 mm,我们实现了单色THz发射在0.75至3 THz范围内可调,并证明它有可能跨越0.2-6 THz,线宽为〜20 GHz,效率为〜1×10-5,从而实现〜800 nW的THz功率。展示了大气特征从而为紧凑,低成本,扫频太赫兹光谱学开辟了道路。

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  • 来源
    《光:科学与应用(英文版)》 |2019年第2期|226-230|共5页
  • 作者单位

    Department of Electronic and Electrical Engineering, University of Sheffield,Sheffield S1 4DE, UK;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield,Sheffield S1 4DE, UK;

    EPSRC National Centre for Ⅲ-Ⅴ Technologies, University of Sheffield, Broad Lane, Sheffield S3 7HQ, UK;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, UK;

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