'Clean'doping to advance 2D material phototransistors

摘要

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication.Here the authors reveal“clean”doping to enhance the electric and photoelectric performance of two-dimensional(2D)indium selenide(InSe)via a neutron-transmutation method for the first time,even after device fabrication.