Dielectric Properties of Ag(Nb_(1-x)Ta_x)O_3 and Bi_2O_3 Doped Ag(Nb_(1-x)Ta_x)O_3 Ceramics

摘要

Dielectric properties of Ag(Nb 1-x Ta x )O 3 and Bi 2 O 3 doped Ag(Nb 1-x Ta x )O 3 solid solutions were investigated.The results show that with the increase of Ta content(x),the sintering temperature increased, and the dielectric loss(tanδ)and the temperature coefficient(α c )decreased.Ag(Nb 1-x Ta x )O 3 (x=0.4)ceramics sintered at 1 100℃had the highest permittivity(516.8)and a lower tanδ(0.0021)at 1 MHz,and its temperature coefficient was about 191 ppm/℃.The sintering temperature of Ag(Nb 1-x Ta x )O 3 (x=0.4)was lowered by the addition of Bi 2 O 3 ,and its dielectric properties were improved.Ag(Nb 0.6 Ta 0.4 )O 3 ceramics with 2.5 wt%Bi 2 O 3 addition presented the optimum dielectric properties(ε=566,tanδ=0.0007 andα c ≈0ppm/℃)(1 MHz).