The study of silicon on insulator(SOI)MOSfield effect transistors(MOSFETs)has been ofgreat interest in recent years[1-2].As the di mensionsof SOI MOSFETs are aggressively scaled into thenanoscale regi me,the inversion carriers shift appar-ently away fromthe interface of Si O2/Si due to thequantumeffect.So it is quite necessary to take thequantumeffect into consideration in SOI MOSFETmodeling and si mulation.The Schr dinger-Poisson(SP)equations subject to an appropriate boundarycondition at the interface of ...
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