Si3 N4钝化光电二极管的辐照实验研究

摘要

The radiation effect of photodiodes passivated with chemical vapor deposition Si3 N4 and Si3 N4-SiO2 has been studied respectively. The effects of electron irradiation and proton irradiation on device performance are compared.It is found that Si3 N4 passivation has little effect on visible light(400 ~800 nm)in spite of electron irradiation or proton irradiation.Si3 N4 passivation process could be applied in the photovoltaic industry.%研究了化学气相淀积 Si3 N4钝化、Si3 N4-SiO 2复合钝化对光电二极管抗辐射性能的影响,比较了电子辐照和质子辐照两种类型辐照对器件性能的影响,认为不管是质子辐照还是电子辐照,Si3 N4钝化对于可见光部分(400~800 nm)影响不大,Si3 N4钝化工艺可以应用于光伏产业。