首页> 中文期刊> 《电子科学学刊:英文版 》 >DEVELOPMENT OF AN S-BAND KLYSTRON WITH BANDWIDTH OF 11

DEVELOPMENT OF AN S-BAND KLYSTRON WITH BANDWIDTH OF 11

             

摘要

This letter introduces the design ideas, simulation and test results of an S-band klystron with bandwidth of 11%, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS). On the peak power level of 800 kW, the efficiency of klystron is more than 30%; the gain is more than 41 dB; the equal-driving relative instantaneous bandwidth is over 11%; the average power is larger than 8 kW, and the power fluctuation within bandwidth is less than 1.5 dB.

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