Study on Manganin High Pressure Array Sensor

摘要

A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials （manganin thin films） are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO2 thin films by electron beamevaporation.Based on impedance match method of "back configuration",the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa-1.The upper limit and measure precision of sensor is improved.