高功率窄脉宽半导体激光激励器设计

摘要

为了获得高功率窄脉宽半导体激光,设计了半导体激光器相应的激励单元,论述MOSFET作为高速开关的工作机理,分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型.为了使MOSFET开关速度尽可能快,根据前述分析,提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路.当激光二极管接入放电回路时,实验表明:激光二极管输出光的峰值功率可达67.5 W,脉宽约为20 ns.最后,简要分析了影响光脉冲宽度的因素.%In order to achieve high peak power and narrow pulse-width semiconductor laser, a driving system for the laser was designed. The electrical circuit for producing narrow-high current pulses based on MOSFET as a fast switch for the discharge circuit was analyzed. The working procedure of the MOSFET as a fast switch was discussed. In order to make the MOSFET switch as fast as possible, the push-pull driving circuit was brought forward and the circuit of narrow trigger pulses was designed. When the LD was connected to the RC discharge circuit, the peak power of the emission laser could be up to 67. 5 W and the full width at half maximum (FWHM) could reach 20 ns. Finally, the impact factors on the pulse width of the laser were analyzed.