高亮度顶发射单色绿光OLED微显示器件制备

摘要

通过采用高效磷光体系材料和顶发射有机发光结构，配合自有的SVGA060全数字信号电路系统架构CMOS硅基驱动电路，获得了发光峰位于535 nm的高亮度单色绿光、0.6英寸、800×600分辨率OLED微显示器件，最大亮度可达20000 cd/m2。其起亮电压为2.6 V，亮度从20 cd/m2到20000 cd/m2的驱动电压摆幅为2.7 V，最大电流效率为24.43 cd/A。电流密度为20 mA/cm2时，色坐标CIEX＝0.286、CIEY＝0.665。该器件在1000 cd/m2和500 cd/m2亮度下的半衰期为42559 h和186208 h。%A high brightness, 0.6inch, 800×600, mono green OLED micro-display, which based on phosphorescent materials, high efficient top-emitting structure and SVGA060 si-base CMOS backplane with full digital system driver circuit have been fabricated. The voltage of device start working is only 2.6V, and the voltage swing as low as 2.7V from 20cd/m2to 20000cd/m2. When current density is 20mA/cm2, the green emission with peak at 535nm and CIE coordinatesX=0.286,Y=0.665. The maximun current efficiency is 24.43cd/A. The optimized devices have a half-life of 42559 h@1000cd⁄m2 and 186208 h@500 cd⁄m2.