Based on the mathematical model of quantum well laser diode(QW LDs) developed, the paper presents a relative intensity noise(RIN) model, which employs Gaussian form random noise with its average being to zero. It can be straightforwardly used to describe the effect of the noise on the performance of QW LDs. The RIN becomes notable in the frequency range of interests and therefore affects the device modulation property. The results are in good agreement of the published data. The RIN model proposed and the results can be used for purpose of device technique improvement and performance simulation of optical communication systems and networks.
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