首页> 中文期刊> 《强激光与粒子束》 >中红外高能激光探测单元

中红外高能激光探测单元

             

摘要

基于光电导探测原理,分析了影响室温光导型InSb探测器在中红外激光功率参数测量中的因素,得到了材料掺杂数密度、环境温度对探测器暗电阻、光谱响应率和光谱探测率的影响规律;开展了探测器在强激光辐照下的热效应理论模拟和实验研究,模拟分析了探测器在激光辐照下的动态响应特性.结果表明:针对测量系统中所使用的探测器,在激光功率密度小于4 W/cm2时,激光热效应对测量结果的影响可忽略;研制了相应的恒流源驱动电路,实现了中红外高能激光功率参数的探测.%Theoretical calculation and experimental study were performed for the P-type indium antimonide photoelectric detector used in the high energy mid-infrared laser measurement. The characteristics of the dark resistance, spectral responsivity and spectral detectivity versus impurity concentration and working temperature of the detector were obtained. Thermal effects of the detector under high power laser irradiation were theoretically and experimentally. The results show that the thermal effects can be neglected in the measurement when the laser power density is below 4 W/cra2. The constant-current source driver of the detector unit was developed, and applied to power measurement of high energy mid-infrared laser.

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