卫星元器件抗辐射指标优化分析

摘要

目的 在航天器设计中对选用的电子元器件提出了抗辐射指标要求.随着航天器设计寿命增加,对元器件提出的抗辐射指标越来越高,因此需要优化对元器件的抗辐射指标要求,以降低因辐射指标不满足而限制元器件的选择范围.方法 通过对国内外抗辐射指标体系的对比分析和典型轨道、典型器件的数据分析,探讨总剂量指标的优化方法.对在轨翻转概率的影响因素进行分析,并采用典型数据的单粒子翻转概率评估,明确采用单一LET阈值指标的局限.结果 总剂量效应和单粒子效应指标均有优化的方法和空间.结论 通过对辐射环境的细化分析,降低辐射设计裕度,可降低总剂量的辐射指标要求.结合单粒子效应的应用需求以及防护设计,降低对器件LET阈值要求.%Objective Design of spacecraft has requirements on radiation resistance indexes of electronic components.With the increase of spacecraft design life,the components requires higher radiation resistant index,so it is needed to optimize the radiation resistance index for components,in order to reduce the limit of components due to insufficient radiation indicators.Methods Through comparative analysis on domestic and foreign systems of anti radiation indicators and date analysis of typical orbit and typical device,optimization method of total dose indicators were discussed.Factors affecting the rollover probability of orbit were analyzed.Typical data of single particle rollover probability was assessed.The limit of single LET threshold indicators was identified.Results There were methods and space for optimization of indexes for both total dose effect and single particle effect.Conclusion Through detailed analysis of the radiation environment and reduction of the radiation design margin,requirements on the total dose radiation index might be reduced.The requirement on LET threshold might be reduced in combination with the application requirement of single particle effect and protection design.