High Performance SOI Gate-bulk Connected LDMOSFET for RF Power Amplifier Application in Short and Medium Range Wireless Communication

摘要

A novel application of SOI Gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. With the three dimensional device and circuit simulator ISE, the characteristics of the SOI Gate-bulk connected (GBC) LDMOSFET for RF power amplifier application are investigated. This application can allow this power transistor has higher intrinsic gain, lower power consumption, higher driving current capability and higher breakdown voltage. The results show that the good performance of this novel application can be used in the further design of RF transmitter.