Influence of the Annealing Temperature on the Thickness and Roughness of LaSUB2/SUBTiSUB2/SUBOSUB7/SUBThin Films

摘要

In this work, the impact of the substrate annealing temperature on the thickness and roughness of La₂Ti₂O₇ thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited style="white-space:normal;">La₂ style="white-space:normal;">Ti₂ style="white-space:normal;">O₇ thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500 style="white-space:nowrap;"> style="white-space:nowrap;">° style="white-space:nowrap;">C. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500 style="white-space:nowrap;"> style="white-space:nowrap;">° style="white-space:nowrap;">C). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.