Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy

摘要

cqvip:Photoluminescence(PL)bands from potassium dihydrogen phosphate(KDP)crystals are studied by time-resolved PL spectroscopy.KDPcrystals irradiated at a laser fluence of 11.5 J/cm^(2) are found to have the highest probability of phosphorus–oxygen hole center defects and the lowest probability of phosphorus-oxygen electric center defects,in contrast to the probabilities of these defects forKDPcrystals irradiated at 9.0 J/cm^(2).The probabilities of these two defects occurring in retired components are found to be intermediate between those for crystals irradiated at the two different fluences.The two types of defects may result fromtwo differentmechanisms and may interconvert under certain conditions.Thus,there are differences between the defects in KDP crystals irradiated at a high laser fluence and those in retired components.