Rapid subsurface damage detection of SiC using inductivity coupled plasma

摘要

This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.