Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss

摘要

It is well known that [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (Jsc), fill factor (FF), open-circuit voltage (Voc) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH3NH3PbI3 (MAPbI3) precursor solution was 1 wt%, the device obtained the smallest Voc decay (less than 1%) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C60) as electron transport layer (ETL). The PSCs Voc stability improvement is attributed to enhanced crystallinity of photoactive layer and decreased non-radiative recombination by PCBM doping in the perovskites.