Scheme for N-Qubit Toffoli Gate by Transport of Trapped Ultracold Ions

摘要

We propose a potentially practical scheme for implementing an n-qubit Toffoli gate by elaborately controllingthe transport of ultracold ions through stationary laser beams.Conditioned on the uniform ionic transport velocity,the n-qubit Toffoli gate can be realized with high fidelity and high successful probability under current experimentalconditions,which depends on a single resonant interaction with n trapped ions and has constant implementation timewith the increase of qubits.We show that the increase of the ion number can improve the fidelity and the successfulprobability of the Toffoli gate.