Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupling Low-dimensional Systems

摘要

＜正＞ By using the transfer inatrix method within the framework of the dielectric continuum approximation,uniform forms for the interface optical （IO） phonon modes as well as the corresponding electron-IO phonon interac-tion Hamiltonians in n-layer coupling low-dimensional systems (including the coupling quantum well （CQW）, couplingquantum-well wire（CQWW）, and coupling quantum dot （CQD） have been presented. Numerical calculations on thethree-layer asymmetrical AlGaAs/GaAs systema are performed, and the analogous charactrics for limited frequenciesof IO phonon in the three types of systems （CQW,CQWW,and CQD）when the wave-vector and the quantum numberapproach zero or infinity are anlyzed and specified.