Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

摘要

Using the configuration-integration methods(CI)[Phys.Rev.B 45(1992)19],we report the results ofthe Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field.We discuss thevariations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D,the radius R of the quantum dot,and also as a function of electric field F.We find that the ground energy and bindingenergy of impurity placed anywhere depend strongly on the position of impurity.Also,electric field can largely changethe Hydrogenic-impurity ground state only limiting to the big radius of quantum dot.And the differences in energy leveland binding energy are observed from the center donor and off-center donor.