首页> 中文期刊> 《中国物理快报:英文版》 >EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION

EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION

         

摘要

It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional(2D)electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17%and 23%,respectively,and the Hall plateaus and the minima of Shubnikov-de Haas(S-dH)oscillation curves anomalously shifted over each other.The measurements after three weeks showed that the effects mentioned above had disappeared substantially,however,the stronger persistent photoconductivity still remained.

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